Hamburg 2001 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 24: Poster II
HL 24.64: Poster
Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3
Diffusion photovoltage in poly-(p-phenylenevinylene — •volodimyr Duzhko1, Thomas Dittrich1, Boris Kamenev2, Victor Yu. Timoshenko1,2, and Wolfgang Bruetting3 — 1Technische Universitaet Muenchen, Physik Department E16, D-85748 Garching, Germany — 2M. V. Lomonosov Moscow State University, Faculty of Physics, 119899 Moscow, Russia — 3Universitaet Bayreuth, Experimentalphysik II, D-95440 Bayreuth, Germany
Transient and spectral photovoltage phenomena are investigated in poly-(p-phenylenevinylene). The photovoltage transients are excited with short laser pulses and are retarded strongly in time. The retardation of the photovoltage transients depends on the sample thickness, laser intensity and bias illumination. The photovoltage signal is caused by separation of excess electrons and holes due to their concentration gradient and different diffusion coefficients (diffusion photovoltage). A numerical analysis yields a diffusion coefficient of excess holes on the order of 10-6 cm2/Vs, while the value for excess electrons is about 1-2 orders of magnitude lower, which is in good agreement with previous studies of charge carrier mobilities in PPV.