Hamburg 2001 – scientific programme
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HL: Halbleiterphysik
HL 24: Poster II
HL 24.81: Poster
Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3
Highly (112) oriented CuInS2 films deposited by RF sputtering — •Yunbin He, Angelika Polity, Ingo Österreicher, Ralf Gregor, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen
CuInS2 films were deposited on float glass substrates by a reactive RF sputter process using a Cu-In inlay target and H2S gas. By optimization of sputter parameters, such as sputter power, temperature of the substrate, and the flow of H2S, pure CuInS2 layers with chalcopyrite structure were obtained. X-ray diffraction (XRD) spectra of the films showed (112) preferential orientation, which was also directly observed by Atomic Force Microscopy (AFM). X- ray photoelectron spectroscopy (XPS) was used to check the composition of the layers sputtered under different conditions. The absorption coefficients of the films were determined by transmission measurements, and the direct band gap of the films was found to be in the rang from 1.47 to 1.51eV.