Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 24: Poster II

HL 24.96: Poster

Donnerstag, 29. März 2001, 10:30–19:00, Rang S\ 3

Characterization of resonating silicon nanostructures — •L. Pescini, D. V. Scheible, A. Erbe, R. H. Blick, H. Lorenz, and J. P. Kotthaus — CeNS and Sektion Physik, LMU München, Geschwister-Scholl-Platz 1, 80539 München

We investigate the mechanical resonating properties of suspended silicon nanostructures. The devices are fabricated out of Silicon-on-Insulator material by means of low-energy high-resolution electron beam lithography as well as wet and dry etching techniques. A thin gold layer is deposited on the nanostructures to improve their conductance. The motion is due to the Lorentz force which acts on the suspended device when an alternate current, whose frequency matches the eigenfrequency of the device, is fed in it and an orthogonal magnetic field is present. We study the nonlinear regime, the temperature dependence of the resonance frequency and the inductive coupling between adjacent nanoresonators. Besides, we consider the influence of a voltage applied between the oscillating structure and in-plane gates and find the possibility of tuning the resonance frequency in a range of few KHz. We acknowledge financial support from DFG.