Hamburg 2001 – scientific programme
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HL: Halbleiterphysik
HL 24: Poster II
HL 24.99: Poster
Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3
Comprehensive study of experimental parameters influencing Raman-Spectroscopy results — •Simona Kouteva-Arguirova1, Tzanimir Arguirov1, Armin Fischer2, Jürgen Reif1, and Dirk Wolfframm1 — 1LS-Experimentalphysik-II,BTU-Cottbus,Cottbus,D-03013,Postfach10 1344 — 2IHP,Frankfurt(Oder),D-16204,Postfach409
The method of Raman-Spectroscopy has been used in recent years to obtain results about stress in different materials. We found that experimental parameters such like laser power, measurement time and distance between measuremnt points have to be taken into account when analysing Raman spectra. In order to find the reason for phonon shift correctly, the experimental parameters and the material stress have to be well separated. We show that for laser power higher than 20 mW the Raman peak starts to shift. Although the measurement time per point was increased up to 18 seconds, the Raman peak position did not change for laser powers of 60 mW and of 80 mW. Raman spectra were taken across a 200 mm mono-crystalline Silicon wafers with distances between the measurement points ranging from 1 mm to 5 mm. The Raman peak position was almost constant at different positions on the wafer for laser power ranging from 20 mW up to 130 mW.