Hamburg 2001 – scientific programme
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HL: Halbleiterphysik
HL 27: GaN II
HL 27.10: Talk
Thursday, March 29, 2001, 12:45–13:00, S7
Investigations on the growth of self-assembled GaInN-GaN quantum dots on SiC by MOVPE — •YASUYUKI KOBAYASHI1,2, BERTRAM KUHN1, JURGEN OFF1, HEDWIG GRABELDINGER1, and FERDINAND SCHOLZ1 — 14. Physikalisches Institut, Universitat Stuttgart, 70550 Stuttgart — 2NTT Basic Research Laboratories, Kanagawa, 243-0198 Japan
Self-assembled GaInN-GaN quantum dots have found much attention because of their potential application in optoelectronic devices for the blue and green spectral region. As a prerequisite for the growth of such dots, we have optimized GaN layers on 6H-SiC using low-pressure metalorganic vapor phase epitaxy with an AlGaN buffer layer resulting in a x-ray rocking curve linewidth of 250 arcsec and a 4K photoluminescence (PL) linewidth of 3.7meV. On top of such layers, GaInN with a nominal In content of 16 thicknesses ranging from 4 to 12 monolayers was deposited at 700∘C. Atomic force microscopy images showed indications for quantum dot formation in these layers. For PL measurements, these layers were covered by another GaN layer. They exhibited narrow emission lines at energies between 2.55 and 3.0 eV depending on the nominal thickness of the deposited GaInN.