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HL: Halbleiterphysik

HL 28: Si / Ge

HL 28.5: Vortrag

Donnerstag, 29. März 2001, 11:30–11:45, S9/10

Effect of uniaxial stress at ¹¹¹In-P complex in Si. — •G. Tessema and R. Vianden — Institut für Strahlen und Kernphysik, Universität Bonn

The influence of mechanical uniaxial stress on In-P complex in Si was studied by means of perturbed angular correlation technique. This hyperfine interaction technique is sensitive to the variation of the charge distribution around the probe nucleus caused by changes of the lattice constant[2]. The measured PAC time spectra showed the inability of uniaxial tensile stress along the <110> crystal axis to cause further relaxation at the In-P complex. Besides, unpaired ¹¹¹In probe on substitutional sites constituting the largest fraction of the implanted probe nuclei provide important information about the nature of the implanted region. In contrast to what has been observed for ¹¹¹In implanted intrinsic Si, the applied stress has negligible influence on the unpaired probe nuclei, indicating the existence of regions in the implanted layer, which are unaffected by the applied stress. Possible reasons shall be discussed.

[1] Th. Wichert and M.L. Swanson, J.Appl. Phys. 66(7), (1989), 3026

[2] G.Marx, Doctoral thesis, Rheinische Friedrich-Wilhelms-Universität Bonn, (1995)