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Hamburg 2001 – scientific programme

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HL: Halbleiterphysik

HL 30: III-V Halbleiter II

HL 30.4: Talk

Thursday, March 29, 2001, 11:15–11:30, S16

OPTICALLY DETECTED MAGNETIC RESONANCE INVESTIGATIONS OF NATIVE DEFECTS IN LOW TEMPERATURE GROWN BY MBE GaAs — •I. Tkach1, K. Krambrock1, J.-M. Spaeth1, S. Tautz2, and P. Kiesel21Fachbereich Physik, Universität Paderborn, 33095 Paderborn, Germany — 2Institut für Technische Physik I, Erwin-Rommel-Str.1, D-91058 Erlangen, Germany

Experimental results obtained on GaAs grown by MBE at low substrate temperature (200 C) using Magnetic Circular Dichroism of the Optical Absorption (MCDA) and optically detected via change of MCDA Electron Paramagnetic Resonance (MCDA-EPR) are presented. The samples after growth were prepared with lift-off technique and annealed at different temperatures from as-grown to 650 C. The preparation with the lift-off method enables us to expose the material without the influence of the GaAs substrate. In our report emphasis is placed on the investigation of bleaching properties of As-antisite-related defects in LT GaAs . Precise MCDA-EPR and so called tagged by EPR MCDA investigations show that we deal with different As-antisite-related defects in as-grown and annealed material. A critical annealing temperature is near 400 C. MCDA-EPR reveals an yet unknown defect in samples annealed above 450 C which we attribute to a Ga-vacancy-related defect consistent with positron annihilation experiments.

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