Hamburg 2001 – scientific programme
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HL: Halbleiterphysik
HL 34: Heterostrukturen
HL 34.11: Talk
Thursday, March 29, 2001, 18:00–18:15, S17
Microcavity polariton linewidths in the weak disorder regime — •Wolfgang Langbein1, Paola Borri1, Ulrike Woggon1, Jacob R. Jensen2, and Jørn M. Hvam2 — 1Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn-Str. 4, 44221 Dortmund — 2Research Center COM, DTU Bldg. 349, 2800 Lyngby, Denmark
The role of static disorder in the linewidth of cavity polaritons has been measured in a series of semiconductor microcavities with different excitonic inhomogeneous broadening. The investigated samples are single GaAs quantum wells embedded in AlGaAs λ-cavities grown by molecular beam epitaxy. Three structures with identical Bragg mirrors and well widths of 25 nm, 15 nm, and 10 nm were used. In all the samples the excitonic inhomogeneous broadening is significantly smaller than half the Rabi splitting (weak disorder regime). We show experimentally that the influence of the disorder on the polariton linewidth is completely canceled when the polariton energies are far in the tail of the excitonic absorption, in agreement with predictions [1]. The measured linewidths are quantitatively compared with the values calculated from the measured excitonic absorption spectrum of the bare quantum wells and the vacuum Rabi splitting in the microcavities. A generally good agreement is found.
[1] D.M.Whittaker, Phys. Rev. Lett. 80, 4791 (1998).