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HL: Halbleiterphysik

HL 35: Quantenpunkte und -dr
ähte: Optische Eigenschaften II

HL 35.12: Vortrag

Donnerstag, 29. März 2001, 18:15–18:30, S6

Adapting eight-band k·p theory to electronic structure calculations of quantum dots — •O. Stier¹, R. Heitz¹, M. Grundmann^1,2, and D. Bimberg¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, PN 5-2, Hardenbergstraße 36, D-10623 Berlin — ²Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig

An improved concept for using the k·p method for electronic structure calculations of inhomogeneously strained quantum dots with large confinement is proposed rendering the eight-band k·p model a reliable tool for the investigation of shape and composition effects on the electronic and optical structure of quantum dots [1]. The enhanced predictive power for properties of zero-dimensional states is achieved by a well-defined selection procedure for the bulk property parameters of the constituent materials. A comparison with atomistic calculations demonstrates the efficiency of our method and suggests that effects of the atomic structure play a marginal role in many relevant types of self-assembled quantum dots.

[1] O. Stier, Electronic and Optical Properties of Quantum Dots and Wires, Berlin Studies in Solid State Physics, ed. by C. Thomsen et al. (Wissenschaft und Technik Verlag, Berlin, 2000)