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Hamburg 2001 – scientific programme

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HL: Halbleiterphysik

HL 41: Ultrakurzzeitph
änomene II

HL 41.5: Talk

Friday, March 30, 2001, 12:30–12:45, S9/10

Spin coherence and spin dephasing in GaN — •B. Beschoten1,2, E. Johnston-Halperin2, D.K. Young1,3, J.E. Grimaldi1, S. Keller3, S.B. DenBaars3,4, U.K. Mishra3, E.L. Hu3, D.D. Awschalom1, and 51Department of Physics, University of California, Santa Barbara, California 93106 — 22. Physikalisches Institut, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany — 3Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 — 4Materials Department, University of California, Santa Barbara, California 93106 — 5

Recent observations of extremely long spin coherence times for optically injected spins in non-magnetic semiconductors have raised the possibility that these spin-coherent properties may eventually enable quantum computational operations in solid state systems. In this context, the III-V semiconductor GaN is intriguing in that it combines a high density of charged threading dislocations (typically 108 - 1010 cm−2), with high optical quality. Here we use time-resolved Faraday rotation to measure electron spin coherence in n-type GaN epilayers. Despite the high densities of dislocations, this coherence yields spin lifetimes of ∼20 ns at T=5 K and persists to room temperature. Spin dephasing is investigated in the vicinity of the metal-insulator transition [1]. The dependence on both magnetic field and temperature is found to be qualitatively similar to previous studies in n-type GaAs, suggesting a common origin for spin relaxation in these systems.
[1] B. Beschoten et al., Phys. Rev. B, RC (in press).

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