Hamburg 2001 – scientific programme

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HL: Halbleiterphysik

HL 42: Photovoltaik II

HL 42.9: Talk

Friday, March 30, 2001, 13:30–13:45, S6

Temperature-dependent lifetime spectroscopy (TDLS) in silicon for solar cells — •Tobias Rehrl, Stefan Rein, Wilhelm Warta, and Stefan Glunz — Fraunhofer ISE, Oltmannsstr.5, 79100 Freiburg

Since the recombination activity of a defect is determined by the product of capture cross section times defect concentration the carrier recombination lifetime can be significantly affected by electrically active defects, even if the defect concentration is below the detection limit of deep level transient spectroscopy (DLTS): the metastable defect in boron-doped Cz-silicon is a prominent example for such a defect.
In the present work the applicability of temperature-dependent lifetime measurements as spectroscopic method is examined. As temperature-dependent lifetime spectroscopy (TDLS) allows a direct determination of the energy level, we applied this tool on intentionally metal contaminated silicon samples using the microwave- detected photoconductance decay method (MW-PCD). The quality of TDLS as a spectroscopic method is demonstrated. For boron-doped Cz-Silicon we determined for the metastable defect in its passive state an energy level of 0.069 eV.