Hamburg 2001 – scientific programme

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HL: Halbleiterphysik

HL 7: Poster I

HL 7.26: Poster

Monday, March 26, 2001, 10:30–19:00, Rang S\ 3

Silicon based photonic crystals made by electrochemistry and plasmaetching — •Cecile Jamois¹, Jörg Schilling¹, Frank Müller¹, Ralf B. Wehrspohn¹, Manfred Reiche¹, and Chandra Sekhar Thirumalai² — ¹MPI of Microstructure Physics Weinberg 2, D-06120 Halle, Germany — ²Department of Physics, Martin-Luther University Halle, Germany

We compare different strategies of preparing photonic crystals based on silicon. Electrochemical etching is known to prepare very perfect two-dimensional photonic crystals having smooth surfaces, very high aspect ratio and interpore distances down to 500 nm [1]. On the other hand, we prepare plasma etched silicon photonic crystals by ICP-etching. Plasma etching allows to prepare thin silicon photonic crystals embedded in an oxide matrix. The quality of the two different structures are compared.
Theoretical design studies for embedded photonic crystals will be also presented.
[1] J. Schilling, A. Birner, F. Müller, R.B. Wehrspohn, R. Hillebrand, U. Gösele, K. Busch, S. John, S.W. Leonard, and H.M. van Driel, to be published