Hamburg 2001 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 7: Poster I
HL 7.49: Poster
Montag, 26. März 2001, 10:30–19:00, Rang S\ 3
Impact ionization and high field effects in semiconductors — •M. Reigrotzki1, J.R. Madureira1, A. Kuligk1, N. Fitzer1, R. Redmer1, S.M. Goodnick2, and M. Dür2 — 1Fachbereich Physik, Universität Rostock, D-18051 Rostock — 2Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706, USA
Impact ionization plays a crucial role for electron transport in wide bandgap semiconductors at high electric fields. Therefore, a realistic band structure has to be used in calculations of the microscopic scattering rate, as well as high field quantum corrections such as the intercollisional field effect. Here we consider both, and evaluate the impact ionization rate for wide-bandgap materials such as ZnS. A pronounced softening of the impact ionization threshold is obtained, and found earlier for materials like Si and GaAs. This field dependent impact ionization rate is included within a full-band ensemble Monte Carlo simulation of high field transport in ZnS. Although the impact ionization rate itself is strongly effected, little effect is observed on measurable quantities such as the impact ionization coefficient or the electron distribution function itself.