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HL: Halbleiterphysik

HL 9: Halbleiterlaser

HL 9.14: Vortrag

Montag, 26. März 2001, 18:45–19:00, S2

Sensitivity of proton implanted VCSEL’s to electrostatic discharge pulses — •Heinz-Christoph Neitzert¹, Barbara Gobbi², Agnese Piccirillo², and Anna Carbone³ — ¹Universita di Salerno, DIIIE, 84084 Fisciano(SA), Italien — ²CSELT, 10148 Torino, Italien — ³Politecnico di Torino, Dip di Fisica, 10129 Torino, Italien

The sensitivity of vertical cavity surface-emitting lasers to electrostatic discharge (ESD) pulses has been investigated under Human Body Model test conditions. Very similar degradation behaviour has been found for VCSEL’s from two different manufacturers, both with proton-implantation for lateral current confinement. For all investigated devices we observed during forward bias stress that the optical degradation precedes the electrical degradation and the forward bias damage threshold pulse amplitudes were only slightly higher than the reverse bias values. At the initial stage of the VCSEL degradation, damaging of the upper p-DBR mirror region has been observed without modification of the active layer. During the ESD tests we monitored the electrical and the optical parameters of the VCSEL’s and measured during forward bias stress additionally the optical emission transients. The optical transients during ESD pulsing enable a fast evaluation of the damage threshold and give also an indication of the time scale of the junction heating during ESD pulses. Electrical noise measurements and reverse bias current monitoring have been shown to be sensitive indicators of the beginning of the VCSEL degradation process.