Hamburg 2001 – scientific programme

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O: Oberflächenphysik

O 12: Grenzfl
äche fest-flüssig

O 12.4: Talk

Monday, March 26, 2001, 17:00–17:15, K

Passivation of a thin anodic oxide / p-Si interface induced by electron injection — •Thomas Burke^1,2, Thomas Dittrich¹, Frederick Koch¹, and Joerg Rappich² — ¹Technische Universitaet Muenchen, Physik Department E16, D-85748 Garching, Germany — ²Hahn-Meitner-Institut, Abt. Si-Photovoltaik, Kekulestr. 5, D-12489 Berlin, Germany

The electronic properties of a thin anodic oxide / p-Si interface are investigated in-situ by pulsed photovoltage and photoluminescence techniques during injection of electrons. A liquid contact of an aqueous (NH₄)₂SO₄ electrolyte is used in the experiments. The surface band bending and the quenching of radiative band-to-band recombination are probed stroboscopically. Electron injection induces a strong decrease of the concentration of surface non-radiative recombination defects and of the fixed positive charge at the interface. Defect reactions are discussed on the basis of the specific role of water molecules at the anodic oxide / p-Si interface.