Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 13: Postersitzung (Adsorption auf Oberfl
ächen, Oberfl
ächenreaktionen, Elektronische Struktur, Epitaxie und Wachstum, Halbleiteroberfl
ächen und Grenzfl
ächen, Oxide und Isolatoren)
O 13.75: Poster
Montag, 26. März 2001, 19:00–22:00, Foyer zu B
Si(001) surface oxidation by N2O — •Patrick Hoffmann, Ricardo P. Mikalo, and Dieter Schmeißer — BTU Cottbus, Lehrstuhl Angewandte Physik II / Sensorik, Erich-Weinert-Str. 1, 03046 Cottbus
A Si(001) surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2O at altered temperatures. Oxynitride layers of different thicknesses and different properties are grown depending on the N2O-pressure and the Si- temperature. This is illustrated by a schematic diagram.
The properties of the different Oxynitride layers were studied by a combined PEEM- and PES-investigation using highly monochromatised synchrotron radiation. The amount of Oxygen and Nitrogen incorporated in the Oxynitride layers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.
A model based on differently established dipole layers in the Oxynitride layers is proposed. This model is capable of interpreting the features appearing in the PE-spectra. This model can also be applied to the interface of Si/SiO2.