Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 13: Postersitzung (Adsorption auf Oberfl
ächen, Oberfl
ächenreaktionen, Elektronische Struktur, Epitaxie und Wachstum, Halbleiteroberfl
ächen und Grenzfl
ächen, Oxide und Isolatoren)
O 13.78: Poster
Montag, 26. März 2001, 19:00–22:00, Foyer zu B
Electronic properties at the maleic anhydride / Si(100) - 2x1 interface — •Thomas Bitzer1, Thomas Dittrich2, Thomas Rada1, and Neville V. Richardson1 — 1St.Andrews University, School of Chemistry, Fife KY16 9ST, UK — 2Technische Universitaet Muenchen, Physik Department E16, D-85748 Garching, Germany
The electronic properties at silicon / organic film interfaces are of major importance if a current is passed across the interface. In this study, the evolution of electronic states in the band gap at the Si(100) - 2x1 surface during the adsorption of maleic anhydride has been followed in-situ with photoluminescence measurements. High-resolution electron energy loss spectroscopy (HREELS) shows that the room temperature adsorption of maleic anhydride leads to the formation of Si-C bonds between chemisorbed organic molecules and silicon dimer atoms. We observe that the formation of Si-C bonds does not induce the formation of gap states. However, thermally induced decomposition of the chemisorbed maleic anhydride molecules and desorption of hydrogen increases dramatically the density of gap states. The consequences for future silicon / organic film hybrid systems will be discussed.