Hamburg 2001 – scientific programme

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O: Oberflächenphysik

O 16: Elektronische Struktur (II)

O 16.4: Talk

Tuesday, March 27, 2001, 12:00–12:15, B

Electronic Structure of GaSe-passivated Si(111) surfaces — •A. Klein¹, R. Rudolph², C. Pettenkofer², A. Bostwick³, J. Adams³, M. Olmstead³, R. Fritsche¹, and W. Jaegermann¹ — ¹Technische Universität Darmstadt, FB Materialwissenschaft — ²Hahn-Meitner-Institut, Berlin — ³University of Washington, Seattle, USA

The electronic structure of GaSe terminated Si(111) surfaces has been determined by energy dependent and angle-resolved valence band and core-level photoemission using synchrotron radiation. The surface termination consist of a Ga layer bonded to the topmost Si atoms and a Se layer ontop with each Se atom bonded to three Ga. The arrangement of the Ga and Se atoms is identical to that of a half-sheet of the layered semiconductor GaSe. The surface thus contains no dangling bonds. The observed dispersion of the energy bands is very close to those of a GaSe single crystal and is interpreted in terms of tight binding energy states. The dominance of the GaSe-derived states over those of Si-derived states is obvious and is different to other Si surface terminations.