Hamburg 2001 – wissenschaftliches Programm

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O: Oberflächenphysik

O 18: Halbleiteroberfl
ächen und -grenzfl
ächen

O 18.2: Vortrag

Dienstag, 27. März 2001, 11:30–11:45, M

Boron-Stabilized c(4×8) Structure of Clean Si(001) — •Hans-Joachim Müssig, Konstantin Ignatovich, Victor Zavodinsky, and Jarek Dabrowski — IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany

In order to develop higly predictive simulation tools for deposition of ultrathin films on a substrate, one needs to perform experiments in which the atomic structure of the substrate is well defined. We report STM images and ab initio interpretation of a boron-stabilized reconstruction of Si(001). This structure appears on heavily B-doped Si(001) samples after flashing and consists of an ordered mixture of Si dimer vacancy pairs separated by three Si ad-dimers in a row. A related c(4×8) reconstruction has recently been identified as a metastable structure of clean Si(001) and can be produced by Solid Phase Epitaxy [1]. The formation of the B-stabilized structure has its analogue in the formation of 2×n rows on Ni-contaminated Si(001) and, similarly to the case of Ni contamination, may render B-doped samples useless for reliable studies after repeated cleaning by flashing. However, the B-related reconstruction is by far less ordered than the Ni-stabilized 2×n and therefore difficult to identify in diffraction experiments.

[1] Y. F. Zhao, H. Q. Yang, S. J. Pang, Phys. Rev. B 62, 7715 (2000).