Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 25: Postersitzung (Grenzfl
äche fest-flüssig, Methodisches, Nanostrukturen, Organische Dünnschichten, Rastersondentechniken, reine Oberfl
ächen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie, Sonstiges)
O 25.21: Poster
Mittwoch, 28. März 2001, 15:00–18:00, Foyer zu B
CVD nanolithography by non-contact Scanning Force Microscopy — •M.D. Croitoru1, A. Höchst1, W. Clauss1, S. Roth2, and D. P. Kern1 — 1Univ. of Tübingen, Inst. für Angewandte Physik — 2Max-Planck-Inst. für Festkörperphysik, Heisenbergstr. 1, D-70569 Stuttgart
A Scanning Force Microscope (SFM) system is used for a new CVD nanolithography technique which allows the addition of conducting structures to existing electrodes on an insulating surface. By applying a voltage between a conducting non-contact cantilever and the electrode on the substrate, metalorganic precursor molecules adsorbed at the surface can be decomposed, leading to local deposits. Control experiments on a conducting surface showed that the dimensions of the deposited structures are in the submicron range and depend on shape and amplitude of the applied voltage pulses. This SFM CVD technique is intended for making electrical contact to single-walled carbon nanotubes (SWNT) on an insulating surface. Compared to electron beam lithography this technique has several potential advantages, like the avoidance of resist processing and in-situ control of growth and electrical characteristics of the fabricated structures. Data on growth rates, composition and electrical properties of the deposits will be presented.