Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 25: Postersitzung (Grenzfl
äche fest-flüssig, Methodisches, Nanostrukturen, Organische Dünnschichten, Rastersondentechniken, reine Oberfl
ächen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie, Sonstiges)
O 25.78: Poster
Mittwoch, 28. März 2001, 15:00–18:00, Foyer zu B
In- situ Reflectance Anisotropy Spectroscopy as a powerful tool for surface processes in cubic materials — •Raul Balderas-Navarro1, Michael Hohage2, LiDong Sun2, Georo Boisin2, Kurt Hingerl1, and Peter Zeppenfeld2 — 1Institute for solid State Physics. University of Linz — 2Institute of Experimental Physics. University of Linz
Reflectance Anisotropy Spectroscopy (RAS) measures the difference of the complex reflectance along two perpendicular axes in the surface (1). In the case of optically isotropic materials, RAS is highly sensitive since by symmetry arguments the anisotropy must arise from the surface. Most of the work on RAS has been concentrated on cubic semiconductors and only recently it was extended to study metals surfaces. In this contribution we present some of the studies carried out on II-VI semiconductors: probing surface electric fields in ZnTe and CdTe by taking advantage of the breakdown of the semiconductor cubic symmetry at the surface barrier, detection of anisotropic strains due to interface mismatch during ZnTe/CdTe heterointerface formation and preliminary results on gas absorption on clean Cu(110) under ultrahigh vacuum environment.
(1) D.E. Aspnes, and A.A. Studna, Phys. Rev. Lett. 54, 1956 (1885)