Hamburg 2001 – wissenschaftliches Programm
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TT: Tiefe Temperaturen
TT 25: Postersitzung III: Pinning und Vortexdynamik, Massive HTSL, Bandleiter, Transporteigenschaften in HTSL, SL dünner Filme, Elektronen und Phononen in HTSL, Tunneln, Borkarbide, Quantenphasen und Metall-Isolator-Überg
änge, Anwendungen, Sonstiges
TT 25.29: Poster
Donnerstag, 29. März 2001, 14:30–17:00, Rang S\ 3
Anisotropy and interlayer interaction in Mo/Si multilayers — •Anatolii Sidorenko1,2, Reinhard Tidecks1, Nina Fogel3, and Evgenii Buchstab3 — 1Augsburg University, D-86159 Augsburg, Germany — 2Institute of Applied Physics, MD2028 Kishinev, Moldova — 3Solid State Institute, Technion, 32100 Haifa, Israel
The electronic interlayer interaction in superconducting Mo/Si multilayers was determined by the measurements of the upper critical magnetic field and of the magnetoconductivity in the normal state in magnetic field parallel (Hc2∥) and perpendicular (Hc2⊥) to the layers plane. These measurements allow the determination of the anisotropy parameter γ = (dHc2∥/dT)/(dHc2⊥/dT) and of the effective thickness Leff, which characterize the mutual electronic interaction between the Mo layers across the Si layers. For Mo/Si series with constant Si layer thickness, oscillations of Leff are observed in dependence of the Mo layer thickness in correlation with oscillations of the anisotropy parameter γ, found in Mo/Si multilayers earlier. The tunnel (Josephson) nature of the interlayer coupling in a superconducting state is confirmed by measurements of magnetoconductivity on a samples set with a variable Si-layer thickness LSi, where the exponential dependence of the interlayer coupling parameter η ∝ exp(LSi) was determined.