Hamburg 2001 – wissenschaftliches Programm
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TT: Tiefe Temperaturen
TT 25: Postersitzung III: Pinning und Vortexdynamik, Massive HTSL, Bandleiter, Transporteigenschaften in HTSL, SL dünner Filme, Elektronen und Phononen in HTSL, Tunneln, Borkarbide, Quantenphasen und Metall-Isolator-Überg
änge, Anwendungen, Sonstiges
TT 25.56: Poster
Donnerstag, 29. März 2001, 14:30–17:00, Rang S\ 3
Raman Scattering in Nd1−xSrxMnO3 Single Crystals (x=0.3, 0.5) — •K.Y. Choi1, P. Lemmens1, G. Güntherodt1, G. Balankrishnan2, and G. Rangarajan3 — 12. Physikalisches Institut, RWTH Aachen, Aachen,Germany — 2Dept. of Physics, Univ. of Warwick, Coventry, U.K. — 3Dept. of Physics, IIT, Chennai, India
We report temperature- and doping-dependent
Raman scattering spectra of Nd1−xSrxMnO3 single
crystals (x=0.3, 0.5). For x=0.3 it was found that the
electronic Raman scattering in B1g symmetry shows near
a change from a diffusive response in the paramagnetic insulator
phase to a flat continuum response in the ferromagnetic metallic
phase. This electronic scattering intensity increases
with decreasing temperature below the metal-insulator transition
near TC ∼ 235 K. This is ascribed to an increase in the
density of states at the Fermi energy and an enhancement of
the electronic correlations in the ferromagnetic metallic phase.
For x=0.5 the phononic Raman spectra exhibit additional modes at
489cm−1, 610cm−1 and 654cm−1 for temperatures below
T*∼ 180 K. The intensity of these modes does not fall off
linearly upon approaching T*. This critical
temperature is identified as the charge ordering
temperature,T*≅TCO.
Work supported by DFG/SPP1073