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TT: Tiefe Temperaturen

TT 8: Mesoskopische Systeme

TT 8.4: Vortrag

Dienstag, 27. März 2001, 11:00–11:15, A

Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor — •Daniel Boese^1,2 and Herbert Schoeller^2,1 — ¹Inst. für Theo. Festkörperphysik, Univ. Karlsruhe — ²Forschungszentrum Karlsruhe, Inst. für Nanotechnologie

We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C₆₀ single electron transistor experiment by Park et al. [Nature 407, 57 (2000)]. We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.