Regensburg 2002 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 15: Ionenimplantation: Erzeugung, Nachweis und Ausheilung von Defekten
DS 15.2: Vortrag
Mittwoch, 13. März 2002, 15:30–15:45, HS 32
Epitaxial recrystallization of Rb-beam amorphized α-quartz — •S. Gasiorek1, S. Dhar1, K.-P. Lieb1, J. Keinonen2, and T. Sajavaara2 — 1Zweites Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7/9, D-37073 Göttingen, Germany — 2Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki, Finland
We have investigated the epitaxial regrowth of Rb amorphized α-quartz during thermal annealing in air and 18O in the temperature range of 570 - 900oC. The samples were implanted with 175 keV Rb ions at liquid nitrogen temperature with fluence of 2.5x1016 Rb/cm2. The evolution of the amorphous layer and Rb depth distributions were monitored by means of Rutherford backscattering spectrometry in channeling geometry (RBS-C). The migration of oxygen by performing thermal treatments in 18O atmosphere was studied by time-of-flight elastic recoil detection analysis (TOF-ERDA). Complete epitaxial regrowth has been observed at about 870oC. The concept of the SiO2 - network topology has been used to explain the observed 18O indiffusion and the related Rb migration during the recrystallization process.