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DS: Dünne Schichten

DS 15: Ionenimplantation: Erzeugung, Nachweis und Ausheilung von Defekten

DS 15.2: Vortrag

Mittwoch, 13. März 2002, 15:30–15:45, HS 32

Epitaxial recrystallization of Rb-beam amorphized α-quartz — •S. Gasiorek¹, S. Dhar¹, K.-P. Lieb¹, J. Keinonen², and T. Sajavaara² — ¹Zweites Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7/9, D-37073 Göttingen, Germany — ²Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki, Finland

We have investigated the epitaxial regrowth of Rb amorphized α-quartz during thermal annealing in air and ¹⁸O in the temperature range of 570 - 900^oC. The samples were implanted with 175 keV Rb ions at liquid nitrogen temperature with fluence of 2.5x10¹⁶ Rb/cm². The evolution of the amorphous layer and Rb depth distributions were monitored by means of Rutherford backscattering spectrometry in channeling geometry (RBS-C). The migration of oxygen by performing thermal treatments in ¹⁸O atmosphere was studied by time-of-flight elastic recoil detection analysis (TOF-ERDA). Complete epitaxial regrowth has been observed at about 870^oC. The concept of the SiO₂ - network topology has been used to explain the observed ¹⁸O indiffusion and the related Rb migration during the recrystallization process.