Regensburg 2002 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Dünne Schichten
DS 15: Ionenimplantation: Erzeugung, Nachweis und Ausheilung von Defekten
DS 15.3: Vortrag
Mittwoch, 13. März 2002, 15:45–16:00, HS 32
Swift heavy ion irradiation of pre-damaged GaAs and InP - the effect of high electronic energy deposition — •Andrey Kamarou1, Elke Wendler1, Peter Gaiduk2, and Werner Wesch1 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena — 2Belarusian State University, Radiophysical Faculty, Kurchatova Str. 1, 220064 Minsk
In the present paper we study complex effects of swift heavy ion irradiation in GaAs and InP, which were pre-damaged by implantation of 600 keV Se ions. Three different ion fluences were chosen in order to obtain various defect concentrations; namely, a low and a medium one as well as an amorphous layer. These pre-damaged samples were irradiated with various fluences of 390 MeV Xe at room temperature. The ion flux was kept constant at about 5×109 cm−2 s−1 and the samples were mounted on a copper holder with silver paste, giving a good thermal contact to prevent sample heating. The samples were studied by means of RBS/channeling using 1.4 MeV He ions and a backscattering angle of 168 ∘. In the case of GaAs the investigations reveal a pronounced defect annealing within the pre-damaged layers. This effect can be related to the high energy density deposited in electronic processes due to the stopping of the Xe ions. However, the behaviour of InP is quite different. Here the effect of partial damage annealing is not so distinct for the different pre-damage concentration levels. In order to obtain more detailed information on the defect types involved, TEM/XTEM investigations are carried out.