Regensburg 2002 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 17: Schichtherstellung I

DS 17.1: Hauptvortrag

Donnerstag, 14. März 2002, 09:30–10:15, HS 31

Thin film growth by PVD in the presence of residual gas — •Jochen Schneider — LTH, RWTH- Aachen

Vacuum based techniques are characterized by the presence of residual gas. Thin film deposition onto components for tribological and decorative applications is typically carried out in high vacuum. It is well known that the residual gas in high vacuum mainly consists of water. Depending on the affinity of the residual gas to the growing film material, incorporation during thin film growth has been reported previously [J. M. chemical reactions may be possible. Residual gas based impurity Schneider et al, Appl.Phys.Lett. 74, 200 (1999) and 75, 3476 (1999)]. Here, a review on residual gas - growing film interactions is presented. Sources for residual gas incorporation as well as incorporation mechanisms are described. Furthermore the effect of impurity incorporation on the film structure and film properties is discussed.