Regensburg 2002 – scientific programme
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DS: Dünne Schichten
DS 24: Ionenimplantation: Nanocluster- und Schichtsynthese
DS 24.4: Talk
Thursday, March 14, 2002, 11:15–11:30, HS 32
Nucleation and growth of carbon onions synthesized by ion-implantation — •Elsa THUNE1, Thierry Cabioc’h2, Michel Jaouen2, and Franz Bodart3 — 1Zweites Physikalisches Institut, Universität Göttingen, Bunsenstrasse 7/9, D-37073 Göttingen, Germany — 2Université de Poitiers, Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Bât. SP2MI, Métallurgie Physique, UMR 6630 CNRS, Bât. SP2MI, Téléport 2, Bd Pierre et Marie Curie, BP 30179, F-86962 Futuroscope Cedex, France — 3FUNDP, Laboratoire d’Analyse par Réactions Nucléaires (LARN), Dpt de Physique, 61, rue de Bruxelles, B-5000 Namur, Belgium
High dose carbon ion implantation into silver at high temperature has been demonstrated to be powerful for the synthesis of carbon onions having a well-controlled size and structure. Their nucleation and growth mechanisms are discussed from plane view and cross-sectional Transmission Electron Microscopy (TEM) characterizations of implanted samples. Furthermore, the carbon concentration profiles were deduced from Resonant Nuclear Reaction Analysis (RNRA) experiments performed on 13C ion-implanted silver samples. On the basis of these experiments, it clearly appears that the onions nucleate inside the bulk of the metallic samples due to a volume precipitation of the carbon atoms. Moreover, in the very first stage of the implantation process, a very thin amorphous carbon layer is formed on the top of the implanted sample. When the implanted fluence increases, the surface layer is progressively sputtered whereas the carbon onions grow into the bulk due to the new incoming carbon ions.