Regensburg 2002 – scientific programme

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DS: Dünne Schichten

DS 27: Postersitzung

DS 27.25: Poster

Tuesday, March 12, 2002, 15:30–17:30, Poster Physik B

In-situ stress measurements during sputter deposition — •Mirela Pletea, Winfried Brückner, Rainer Kaltofen, Verena Schöps-Dörfel, and Claus M. Schneider — Institut für Festkörper-und Werkstofforschung Dresden, PF 270116, D-01171 Dresden

The control of the stresses developed in thin films during and after preparation is of great importance to their lifetime and reliable performance in technical applications. In order to study this stress development an apparatus using the laser-based optical bending-beam technique has been designed and constructed. The force per unit film width, F/w, is measured in-situ and continuously with a sensitivity of 0.03 N/m and 0.02 N/m using position-sensitive detectors and bicells, respectively. In this paper we describe the apparatus and present the first experimental results from measurements of stress during growth of Cu films sputtered onto Si substrates under various sputtering conditions (deposition rate, sputtering pressure). The first results reveal a tensile-compressive stress evolution and a large stress relaxation during and after deposition of Cu films, respectively. This observed stress behaviour during deposition is associated with 3D island growth, coalescence and subsequent layer-by-layer growth. The large changes of the stress after film deposition could be caused by the plastic deformation and changes of the microstructure due to recrystallization.

This work was supported by DFG (Project BR 1473/4-1).