Regensburg 2002 – scientific programme

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DS: Dünne Schichten

DS 27: Postersitzung

DS 27.2: Poster

Tuesday, March 12, 2002, 15:30–17:30, Poster Physik B

Plasma etching of carbon-containing SiO2-like low-k materials — •Harald Richter, Steffen Marschmeyer, Heike Silz, Dietmar Krueger, Sergey Chernjavski, and Siegfried Guenther — IHP Frankfurt, Im Technologiepark 25, 15234 Frankfurt (Oder)

In order to reduce RC delays of multilevel wiring that connects individual devices of silicon ICs, the industry is currently making a transition to copper metallization and low dielectric constant insulators. With the introduction of such low-k materials into the intermetal dielectric layers, it is important to optimize dry etch processes as to minimize the intermetal layer degradation that is caused by harsh O2 and wet stripping treatments. Here, we show dry etching results of carbon-doped low-k layers used as interlayer dielectrics. With our pattern transfer processes in a CF4/CHF3/Ar plasma and the following in-situ resist strip essential demands for low-k integration are fulfilled. First, small tapered and bowing-free via profiles for optimum subsequent metalization step were realized. Second, low-k dry etching is characterized by a sufficient selectivity to resist. Third, the k value variations caused by etching and subsequent strip process are negligible small. In summary, our developed etch/strip combination achieves essential requirements for low-k integration into advanced back-end-of-line (BEOL) technologies.