Regensburg 2002 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 27: Postersitzung
DS 27.33: Poster
Dienstag, 12. März 2002, 15:30–17:30, Poster Physik B
Ion beam assisted deposition of c-BN films at high temperatures — •Xingwang Zhang1, N. Deyneka1, H.-G. Boyen1, P. Ziemann1 und F. Banhart2 — 1Abteilung Festkörperphysik, Universität Ulm, D-89069 Ulm — 2ZE Elektronenmikroskopie, Universität Ulm, D-89069 Ulm
Beside its technological potential as superhard coating for cutting tools, cubic boron nitride (c-BN) seems to be a promising material for high-temperature semiconductor applications due to its extraordinary thermal stability, its dopability (p- and n-type) and its high thermal conductivity. Up to now, however, most preparation techniques allowing to deposit c-BN on various substrates suffered from the nanocrystalline structure of the resulting film (typical crystal size 5nm). According to recent reports [1,2], increasing the deposition temperature up to the order of 1000∘C could be a promising way to enhance the crystalline quality. We, therefore, have performed a series of IBAD depositions (dual beam technique) changing the deposition temperature between 400∘C and 1000∘C. First results will be presented demonstrating that the grain size and overall crystallinity can significantly be improved at high temperatures as evidenced by high resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), and infrared spectroscopy (FTIR). The optimization of various deposition parameters as well as the problem of diffusion of substrate material at elevated temperatures will be discussed.
[1] D. Litvinov, R. Clark, Appl. Phys. Lett. 74, 955 (1999).
[2] S. Matsumoto, W. Zhang, Jpn. J. Appl. Phys. 39, L442 (2000).