Regensburg 2002 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 11: Poster 1

HL 11.35: Poster

Montag, 11. März 2002, 17:00–19:30, Poster A

1/f NOISE DUE TO ATOMIC DIFFUSION OF IMPURITY CENTERS IN SEMICONDUCTORS — •Ferdinand Grüeneis — Institut für Angewandte Srochastik, Friedrich-Herschelstr.4, 81679 München

Atomic diffusion of impurity centers is investigated as a possible origin of 1/f noise in semiconduc-tors. Following the trace of an individual impurity center, the noise produced at a certain site is calculated; due to diffusion of centers this is an intermittent process. Besides generation-recombination (= g-r) noise, an excess noise is obtained which is attributed to diffusion of impurity centers. This excess noise exhibits 1/f noise and g-r burst noise. 1/f noise is attributed to the return time of a center to the origin; g-r burst noise is the noise produced by centers residing at a certain site. For a n-type strongly extrinsic semiconductor, the Hooge coefficient of the present model is derived and impact of compensating acceptors or additional doping by shallow centers is investigated. The temperature dependence of the Hooge coefficient is calculated and is compared with empirical findings.