Regensburg 2002 – scientific programme

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HL: Halbleiterphysik

HL 11: Poster 1

HL 11.3: Poster

Monday, March 11, 2002, 17:00–19:30, Poster A

Electron tunnelling through graded GaAs/Ga_1−xAl_xAs quantum well and barrier structures: Electric-field effects. — •A. Matos-Abiague and J. Berakdar — Max-Plank Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany

The electronic transmittance in analog graded quantum well and barrier structures in presence of an external electric field is investigated within the transfer matrix formalism. The time evolution of the charge density is described for different composition profiles and for various intensities of the electric field. It is found that both the external electric field and the shape of the composite profiles affect significantly the quantum tunnelling current through the graded structures.