Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 11: Poster 1

HL 11.86: Poster

Montag, 11. März 2002, 17:00–19:30, Poster A

Characterization of CuInS₂ layers deposited by a reactive RF sputter process — •Yunbin He, Thorsten Krämer, Ingo Österreicher, Ralf Gregor, Angelika Polity, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen

CuInS₂ layers were deposited on float-glass substrates by reactive radio frequency (RF) sputtering using an alloyed Cu-In target and H₂S gas in on step. The structural, electrical, and optical properties of the films were investigated and optimized in dependence on the sputter parameters.

The morphology of deposited CuInS₂ was studied by Atomic Force Microscopy (AFM). X-ray Diffraction (XRD) was used to determine the crystal and phase structure of the layers. The composition of the films was measured by X-ray Photoelectron Spectroscopy (XPS) and Energy-Dispersive X-ray Analysis (EDX). The electrical properties of the sputtered CuInS₂ samples as carrier concentration, Hall mobility, and specific resistivity and their dependencies on temperature were investigated by Hall effect measurements.