Regensburg 2002 – scientific programme

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HL: Halbleiterphysik

HL 21: Organische Halbleiter

HL 21.3: Talk

Tuesday, March 12, 2002, 15:00–15:15, H17

Band structure diagram of dimethyl-3,4,9,10-perylenetetracarboxylic diimide/GaAs(100) interfaces — •Mẽndez Henry, Das Arindam, Gorgoi Mihaela, Gavrila Gianina, Park SungGook, Kampen Thorsten, and Zahn Dietrich — Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz

Thin films of dimethyl-3,4,9,10-perylenetetracarboxylic diimide (DiMe-PTCDI) were grown on GaAs(100) substrates by organic molecular beam deposition (OMBD). Prior to the deposition of DiMe-PTCDI the substrates were passivated by wet chemical etching in S2Cl2 and CCl4 or cleaned in hydrogen plasma. The organic/inorganic interfaces were investigated using ultraviolet and x-ray photoelectron spectroscopy. From these measurements the alignment of the highest occupied molecular orbital (HOMO) with respect to the valence band maximum was determined. Additional current voltage and capacitance voltage measurements of Ag/DiMe-PTCDI/GaAs(100) were performed to investigate the lowest unoccupied molecular orbital (LUMO). The variation of the substrate treatment leads to a different alignment between the band edges of the GaAs and the molecular orbitals of the DiMe-PTCDI, making it possible to determine the energy position of the LUMO in DiMe-PTCDI.