Regensburg 2002 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 29: Spinabh
ängiger Transport

HL 29.11: Vortrag

Mittwoch, 13. März 2002, 18:00–18:15, H13

All II-VI resonant tunneling diode. — •Charles Gould, Georg Schmidt, Georg Richter, Peter Grabs, Frank Lehmann, and Laurens Molenkamp — Physikalisches Institut (EP3), Universitaet Wuerzburg, 97074 Wuerzburg

We have grown, and contacted, the first resonant tunneling diodes fabricated in the ZnSe/ZnBeSe material system. This system allows great flexibility in designing the band structures of devices, and allows us to fabricate tunneling barriers similar to those found in GaAs/AlGaAs systems. Moreover, the possibility of inserting Mn in any combination of the well, the barriers and the injector allows us to study a variety of spin related transport phenomena in tunneling. We present here the result of electrical characterization of the devices. They exhibit rich I-V curves with sharp resonance, and with peak to valley current ratios of above 3. Furthermore, the curves for Mn containing devices have additional structure, which is magnetic field dependent.