Regensburg 2002 – scientific programme

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HL: Halbleiterphysik

HL 38: Poster 2

HL 38.10: Poster

Thursday, March 14, 2002, 16:30–19:00, Poster A

Defects in electron-irradiated 6H-SiC: An isochronous annealing Study with Photoluminescence and MCDA — •F. Caudepon, Th. Lingner, S. Greulich-Weber, and J.-M. Spaeth — Fachbereich 6 Experimentalphysik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn

Radiation-induced defects in silicon carbide (SiC) are of intrest in view of the need to implant the material during device fabrication. A major problem is the annealing of the radiation damage.

Electron irradiation is suitable for creating radiation defects in a controlled and reproducible way. We studied the annealing behavior of the photoluminescence (PL) and magnetic circular dichroism of the absorption (MCDA) spectra of electron irradiated 6H-SiC. Numerous PL and MCDA lines of radiation induced defects were observed. Their intensities change with increasing annealing temperature, until finally a few lines dominate the spectra, among them the well-known D1 luminescence. We present details on the observed annealing steps.