Regensburg 2002 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 38: Poster 2
HL 38.3: Poster
Donnerstag, 14. März 2002, 16:30–19:00, Poster A
Evolution of hydrogen induced platelets in silicon — •E.V. Lavrov and J. Weber — Institut für Tieftemperaturphysik, Technische Universität Dresden, 01062 Dresden
It is known that hydrogen can induce plate-like defects on {111} crystallographic planes in silicon after different treatments of hydrogenation. A number of structural models of the platelets were considered of which the most prominent are: (a) A double layer of interstitial hydrogen H2* pairs and (b) hydrogen saturation of the Si–Si bonds at a {111} plane with H2 molecule trapped within the platelet. Raman scattering studies reported that local vibrational modes related to the platelets appear around 2100 cm−1, whereas a local mode at 4158 cm−1 was associated with H2 trapped within the platelet. In this work we present the results of detailed analysis of the polarized Raman scattering spectra measured on {111} hydrogen induced platelets in silicon hydrogenated by remote plasma exposure. Our analysis of the Raman lines at 2100 and 4158 cm−1 identifies the two different types of platelets described above, which exist simultanioulsy with concentraions depending on plasma and annealing conditions.