Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 38: Poster 2

HL 38.46: Poster

Donnerstag, 14. März 2002, 16:30–19:00, Poster A

ZnSe−(Zn,Cd)Se semiconductor microcavities with dielectric Bragg mirrors of ZnS and YF₃ — •Alexander Pawlis, Martin Bartels, Alexandre Khartchenko, Olaf Husberg, Detlef Schikora, and Klaus Lischka — Universität Paderborn, Warburger Strase 100, 33098 Paderborn

II-VI semiconductor microcavities are particulary suited to study light emission as well in the weak as in the strong coupling regime. The active region of the ZnSe microcavity structures presented here consists of one and two strained (Zn,Cd)Se quantum wells which are placed near the antinodes of the standing wave. The microcavity structure is completed by epitaxial grown ZnS and YF₃ distributed Bragg-mirrors. We report on the optimisation of such structures by photoluminescence measurements and high resolution X-ray diffraction studys. Calculations of ZnSe−(Zn,Cd)Se strained quantum well transitions and Fabry-Perot reflection simulations will be shown and compared with optical properties of complete microcavity structures.