Regensburg 2002 – scientific programme
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HL: Halbleiterphysik
HL 42: Pr
äparation/Charakterisierung
HL 42.3: Talk
Friday, March 15, 2002, 11:30–11:45, H13
Investigation of stress in multicrystaline silicon materials by means of Raman spectroscopy — •Simona Kouteva-Arguirova1,2, Winfried Seifert1,3, Martin Kittler1,3, and Jürgen Reif1,2 — 1JointLab BTU/IHP, Universitätsplatz 3-4, 03044 Cottbus — 2BTU Cottbus, LS Experimentalphysik II, Universitätsplatz 3-4, 03044 Cottbus — 3IHP, Im Technologiepark 25, 15236 Frankfurt (Oder)
Micro-Raman spectroscopy with high spatial resolution was used to analyse the stress distribution in the vicinity of grain boundaries in multicrystalline silicon (mc-Si). Stress in mc-Si is crucial for the stability of the material and may cause yield problems during manufacturing of solar cells due to breakage. Two types of mc-Si, block cast and ribbon grown Si samples, were scanned in our experiments. Changes in stress of about 40MPa over a scale of several micrometers were detected around the grain boundaries.
The factors, influencing the accuracy of the local stress measurement were analysed. Three major restrictions of the technique have to be considered: (i) local heating, (ii) the signal-to-noise ratio and (iii) surface topology.
The samples were polished, which allows a better sensitivity to weak stress as is the case in mc-Si materials. Micrographs of the samples were taken by optical microscopy to locate the region of interest.