Regensburg 2002 – scientific programme

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HL: Halbleiterphysik

HL 43: Si/Ge

HL 43.2: Talk

Friday, March 15, 2002, 10:45–11:00, H14

Indium-Impurity pairs in Si and Ge — •G. Tessema and R. Vianden — Institut für Strahlen und Kernphysik, Nussallee 14-16, 53115 Bonn

In the past several Indium-Donor pairs in Si and Ge have been identified [1,2] using Perturbed Angular Correlation (PAC) technique. Theoretical calculations of the electric field gradient (EFG) present at the site of the probe atom (¹¹¹In) in these pairs were quite successful [3]. We have carried out further measurements to identify new pairs using group VI donor atoms and carbon in both Si and Ge. A new, well defined quadrupole interaction frequency(QIF) ν_Q=444(1)MHz (η=0) is observed in Te implanted Si after annealing the sample above 700⁰K. In carbon implanted Ge samples QIF of ν_Q =207(1)MHz η=0.16(3) appeared at annealing temperatures below 900⁰K. At annealing temperatures above 950⁰K it was replaced by a second QIF with 500(1)MHz (η=0). Structural configurations of the newly found pairs in the host lattice and their behavior on annealing temperatures shall be discussed.

[1] Th. Wichert and et al., J.Appl. Phys. 66(7), (1989), 3026

[2] D. Forkel and et al. NIM in Physics Research B63(1992)217

[3] M. Settels and et al.Phys. Rev. Letters, 4369(1999)