Regensburg 2002 – scientific programme

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MA: Magnetismus

MA 10: Poster : Dünne Schichten(1-21),Spinabh.Transp.(22-39),Exch.Bias(40-51),Spindyn.(52-55),Mikromag.(56-66),Partikel(67-74),Abb.Verf.(75-77),Oberfl.+Spinelektr.+Elektr.Theo+Mikromag(75-87),PÜ+Aniso+Werkst/Leg.(88-103),Mol.Mag.+N-dim+Messm.+Postdead(104-111

MA 10.29: Poster

Tuesday, March 12, 2002, 15:00–19:00, Bereich A

Electron beam lithography for the fabrication of microstructured tunneling elements — •Oliver Schwoebken, Andre Bergmann, Kurt Westerholt, and Hartmut Zabel — Department of Condensed Matter Physics, University of Bochum, 44780 Bochum, Germany

Electron beam lithography is a convenient and versatile technique for the preparation of microstructured devices needed for Tunneling Magnetoresistance (TMR) or cpp Giant Magnetoresistance (GMR) measurements. The miniaturization of devices on a micrometer scale is essential for avoiding metallic shorts. We report on the preparation of devices for the simultaneous measurement of 9 GMR- or TMR-elements. We use superconducting V or Nb contact lines and have designed the device so that with the same basic elements measurements of TMR, superconductor ferromagnet tunneling and cpp GMR is possible. The performance of the first elements is shown and discussed.