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MA: Magnetismus

MA 7: Spinabhängige Transportphänomene II

MA 7.6: Vortrag

Dienstag, 12. März 2002, 10:45–11:00, H22

Electronic and Magnetic Properties of Ferromagnetic-Semiconductor-Ferromagnetic (FM/SC/FM) Systems: A Fully Relativistic Approach — •V. Popescu¹, H. Ebert¹, A. Perlov¹, R. Zeller², and P. H. Dederichs² — ¹Department Chemie/Physikalische Chemie, Butenandtstr. 5-13, 81377 München, Germany — ²Inst. für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-52425 Jülich, Germany

Spin-dependent transport between two ferromagnetic electrodes separated by either an insulator or a semiconductor has received a lot of interest in the last years due to its potential technological applications. Recently it could be shown that a measurable spin-polarised injection can be obtained in a TMR Fe/GaAs diode even at room temperature. Many theoretical studies devoted to TMR systems can be found in the literature, but they either neglect relativistic effects or treat the crystalline structure in an approximate way. To allow for a most general description, our present investigations on FM/SC/FM systems have been performed within the framework of Tight-Binding Spin-Polarised Relativistic Multiple Scattering Theory (TB-SPR-KKR). The electronic structure and magnetic properties of Fe/GaAs/Fe as a representative example will be presented and discussed in terms of the effects induced by spin-orbit coupling as well as the implications they might have on the spin-dependent transport.