Regensburg 2002 – scientific programme

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O: Oberflächenphysik

O 13: Postersitzung (Adsorption an Oberfl
ächen, Elektronische Struktur, Magnetismus in reduzierten Dimensionen, Epitaxie und Wachstum, Halbleiteroberfl
ächen und -grenzfl
ächen, Organische Dünnschichten)

O 13.60: Poster

Monday, March 11, 2002, 18:00–21:00, Bereich C

GaAs surface cleaning by low-energy hydrogen ion beam exposure at increased substrate temperature — •Nasser Razek, Karsten Otte, Thomas Chassé, Dietmar Hirsch, and Axel Schindler — Institut für Oberflächenmodifizierung, Permoserstr. 15, D-04318 Leipzig, Germany

A new technology of semiconductor surface cleaning has been applied to GaAs surfaces for the production of contamination free surfaces for wafer direct bonding. This new technique combines a low energy hydrogen ion beam (ion energy < 500 eV) with an increased substrate temperature (150C). The long term change of the GaAs (001) surface composition under the influence of this process was investigated with in situ X-ray photoelectron spectroscopy (XPS). A removal of surface contaminations (e.g. oxides and carbon) due to the hydrogen ion beam treatment could be observed. At elevated substrate temperature (150C), the low-energy hydrogen ion beam (300 eV) produces a contamination-free surface after 410 s without changes in surface composition. In contrast, room temperature hydrogen ion beam exposure results in an As-depleted surface composition and does not remove the contaminations completely. This technique could be used for wafer direct bonding of III-V semiconductors and other processes which require high efficient quality cleaning procedures.