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O: Oberflächenphysik
O 26: Postersitzung (Rastersondentechniken, Nanostrukturen, Teilchen und Cluster, Methodisches, Oxide und Isolatoren, Grenzfl
äche fest-flüssig, Struktur und Dynamik reiner Oberfl
ächen, Oberfl
ächenreaktionen, Zeitaufg. Spektroskopie, Phasenüberg
änge
O 26.31: Poster
Mittwoch, 13. März 2002, 14:30–17:30, Bereich C
Melting Point Lowering of Thin Metal Films (Me - In, Sn, Bi, Pb) in Al/Me/Al Multilayer Film System — •Alexandr Kryshtal1,2, Rainer Anton1, Nikolai Gladkikh2, and Sergei Bogatyrenko2 — 1Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany — 2V.N.Karazin Kharkov National University, 4. Svobody sq, 61108 Kharkov, Ukraine
We have studied the melting point variation of thin Me (In, Sn, Bi, Pb) films between two thick Al films with Me film thickness reduction. These systems have been prepared by subsequent condensation of the components on amorphous substrates in vacuum. The differential method for determination of the melting point has been used that allows us to resolve even the slight melting point variations (less than 0.2K).
We have found the decrease of the melting point with decreasing in Me film thickness for several degrees for all Al/Me/Al film systems. We have also refined the values of the eutectic temperatures of the Me/Al system. Electron microscopy studies of these systems together with the measurements of wetting angles allow us to describe the obtained results in the framework of the thermodynamic approach taking into account the interface energies for crystal-melt phase transitions, and evolution of the binary phase diagram with decreasing film thickness.