Regensburg 2002 – wissenschaftliches Programm

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O: Oberflächenphysik

O 26: Postersitzung (Rastersondentechniken, Nanostrukturen, Teilchen und Cluster, Methodisches, Oxide und Isolatoren, Grenzfl
äche fest-flüssig, Struktur und Dynamik reiner Oberfl
ächen, Oberfl
ächenreaktionen, Zeitaufg. Spektroskopie, Phasenüberg
änge

O 26.58: Poster

Mittwoch, 13. März 2002, 14:30–17:30, Bereich C

High resolution SFM study of etched fluorite cleavage planes — •Christian Motzer and Michael Reichling — Department Chemie, Universität München, Butenandtstraße 5-13. 81377 München, Deutschland

Etching of crystals is an approach to detect dislocations that are regarded as one dimensional defects and determine many material properties. We investigated the (111) cleavage plane of fluorite crystals by SFM after etching with different acids in a variety of concentrations. SFM investigation allows to measure the lateral dimensions of etched pits with much higher resolution and precision than conventional light microscopy that is normally used for this purpose. We find different morphologies of the formed pits that cannot be distinguished by light microscopy. Generally, the shape of pits is trigonal or di-trigonal and the pits appear flat or point bottomed. From their appearance we can deduce details of the dissolution process caused by different crystal defects. Results are encouraging for the development of better dislocation etches and a better understanding of dissolution processes in general.