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O: Oberflächenphysik
O 26: Postersitzung (Rastersondentechniken, Nanostrukturen, Teilchen und Cluster, Methodisches, Oxide und Isolatoren, Grenzfl
äche fest-flüssig, Struktur und Dynamik reiner Oberfl
ächen, Oberfl
ächenreaktionen, Zeitaufg. Spektroskopie, Phasenüberg
änge
O 26.62: Poster
Wednesday, March 13, 2002, 14:30–17:30, Bereich C
Influence of Ar-Ion Bombardment on the Morphology of Cu(110) — •M. Hohage1, L.D. Sun1, P. Zeppenfeld1, G. Boishin1, RE. Balderas-Navarro2, and K. Hingerl3 — 1Institute of Experimental Physics, Johannes-Kepler-University Linz, A-4040 Linz, Austria — 2Facultad de Ciencias and IICO, Universidad Autonoma de San Luis Potosi, San Luis Potosi, SLP 78000 Mexico — 3Institute of Solid State Physics, Johannes-Kepler-University Linz, A-4040 Linz, Austria
The Cu(110) surface sputtered by Ar+ ions at different temperatures has been studied by RDS and STM. After sputtering at room temperature, the surface state related RDS signal at 2.1 eV remains almost constant while the optical anisotropy around 4.3 eV is modified dramatically. In contrast, sputtering at 45 K removes the 2.1 eV peak completely and the change around 4.3 eV is similar to that at room temperature. Annealing experiments show that the 2.1 eV RDS peak recovers already at 250 K whereas for a full recovery of the 4.3 eV peak an annealing temperature larger than 600 K is required. The different behaviour indicates that different typs of annealing process are involved. Indeed, STM imagines allow to assign the change in the RDS signal to different types of surface morphologies and defects: the 2.1 eV peak originated from the surface state transition is very sensitive to the local imperfection of the surface layer like adatoms and local roughness, whereas the bulk related peak at 4.3 eV is more sensitive to strain induced subsurface defects and dislocations created by ion bombardment.