Regensburg 2002 – scientific programme
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O: Oberflächenphysik
O 26: Postersitzung (Rastersondentechniken, Nanostrukturen, Teilchen und Cluster, Methodisches, Oxide und Isolatoren, Grenzfl
äche fest-flüssig, Struktur und Dynamik reiner Oberfl
ächen, Oberfl
ächenreaktionen, Zeitaufg. Spektroskopie, Phasenüberg
änge
O 26.64: Poster
Wednesday, March 13, 2002, 14:30–17:30, Bereich C
Contributions to a Ar/SF6/O2 microwave plasma jet silicon etch process — •Thomas Arnold1, G. Boehm1, S. Grabovski2, A. Schindler1, and H.-E. Wagner2 — 1Institut fuer Oberflaechmodifizierung, Leipzig — 2Ernst-Moritz-Arndt-Universitaet, Greifswald
A high-rate chemical dry etching technique based on the plasma jet principle is presented. In this system a microwave-excited Ar/SF6/O2 plasma jet is used to create reactive radicals for etching silicon. The dependence of the etch rate on the gas mixture and ambient pressure has been determined. Reactive species could be identified by means of optical emission spectroscopy.
For a better understanding of the plasma chemical processes inside the Ar/SF6 plasma jet and on the silicon substrate surface computational models have been built. The kinetic model considers the formation of reactive F and F− radicals and the production of SFx and SFx− by electron impact, electron attachment and significant reverse processes.
The etch process model describes the chemical removal of silicon by F and F− producing volatile SiF4 molecules. Comparisons between the computational models and experiments with chosen conditions show a qualitative correspondence.