Regensburg 2002 – wissenschaftliches Programm

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O: Oberflächenphysik

O 31: Halbleiteroberfl
ächen (II)

O 31.1: Vortrag

Donnerstag, 14. März 2002, 11:15–11:30, H45

Defect structure of MBE-prepared GaAs(113)B surfaces — •Takayuki Suzuki, Yevgeniy Temko, and Karl Jacobi — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin

GaAs(113)B surfaces were prepared by molecular beam epitaxy (MBE) and studied in-situ (without breaking vacuum) by scanning tunnelling microscopy (STM). The topography of this structure, which was assigned to an (8 × 1) Wassermeier model recently [1], is confirmed. The (8 × 1) reconstructed surface consists of Ga-dimer zigzag chains staggered in two different atomic planes including a trench. The surface exhibits nearly no vacancies in the (8 × 1)-reconstructed surface. The following structural defects are observed: monoatomic steps, missing zigzag chains, zigzigzagzag kinks, and 2D dislocations. Furthermore, several adsorbed atomic or molecular species are observed, at the trench as well as at the topmost Ga-dimer zigzag chain. Finally, complete nuclei for 2D growth are also observed. Our observations are important for modelling growth on this surface.

[1] J. Márquez, L. Geelhaar, K. Jacobi, Phys. Rev. B 62 (2000) 9969.